The popularity of smartphones has dramatically changed our lives，People enjoy rich and colorful content through mobile terminals，Especially with5GDevelopment，Improved antenna technology enables high-capacity, high-speed communications，In addition to being able to get a lot of images and video streams，Low latency also enables remote operation，Multiple connections at the same time，Watch live streams, sporting events and more remotely in sync。Future6GIt is expected to further enrich the content。of course，The main technical reason behind these conveniences is the higher frequency of signals available，Allows people to communicate over a wider range of frequencies。

ButBroadbandization of communication signals raises a number of technical issues，One of the more tricky challenges is how to more effectively eliminateIMDSecondary noise。Existing PassMLCCThere are certain limitations to the noise reduction scheme，This article briefly introduces the differences and advantages between Murata's silicon capacitor solutions and traditional solutions.。

What is a base?IMDNoise？

High-speed, high-capacity communications，Base station transmits basic signals of different frequencies in a defined bandwidth area。In the case of broadbanding of signal frequencies，A design problem arose，That is, the nonlinearity of the amplifier causes intermodulation distortion between adjacent basic signals or between the basic signals and their harmonics.，soIMDNoise（Inter Modulation Distortion）。

IMDThe frequency of the noise is proportional to the bandwidth，Therefore,，Broadbanding will lead toIMDThe frequency of the noise also appears in a wider area。especially if you need2StepIMDNoise，with frequencies ranging from tens toMHzto hundredsMHz，Signal quality and filter design are greatly influenced。

【Broadbanding will lead toIMDThe frequency of noise occurs over a wider area】

Alternative 1. Silicon Capacitor

For 7mmx7mmx10mm of blood clot,2KaliIMDNoise，now generally passesMLCCRemove Noise。But...，In order to eliminate the high frequency rangeIMDNoise，Needs containmentESLIngredient，The existing implementation method is due to the inductive composition of the wiring，Unable to smoothly remove noise。

Silicon capacitors can be bonded toFETAttach Nearby，Therefore,，can be redundantESLMinimal containment of ingredients，Supported in hundreds ofMHzIn-area eliminationIMDNoise。

【Silicon capacitors can be bonded toFETAttach Nearby】

Murata's silicon capacitor achieves small size with proprietary technology、Large capacity at the same time，Constantly electrically induced medium was also used.，Therefore,，Stable use even in high temperature environments。Moreover,，Murata Manufacturing is also able to provide thicknesses of100to250umLong products，so that silicon capacitors can be configured on existingPADesigning。

The three silicon capacitors Murata proposes include:

• WLSC Series：Frequency 10GHz；Thickness 100µm
• WBSC Series：Frequency 10GHz；Thickness 250µm
• UWSC Series：Frequency 26GHz；Thickness 100/250µm

1. WLSC Series（New Product）

Murata'sWLSCSeries Silicon Capacitor，is as thin as100μmUpper and lower electrode silicon capacitors for wire bonding。For wireless communication（For example5G）、Radar、a data playback system or something like that.RFHigh-power applications。WLSCCapacitors forDCDecoupling、Matching Circuit、Higher harmonics／Noise filtering function, etc.。

2. WBSC Series

Line BoldWBSCThe series is specially designed for high operating temperatures、Upper and lower electrode silicon capacitors for wire bonding produced for use that emphasizes reliability，Available forDCDecoupling。Thin250μm，The pads are very flat，So standard wire bonding（Ball and wedge）are easier。

3. UWSC Series

Upper and lower electrode silicon capacitors for wire bonding，surpass26GHzUltra-wideband performance，Exceptional noise rejection performance，Optical communication system（ROSA/TOSA、SONETand all other photoelectric products），and high-speed data systems and products，Built ForDCDesigned for decoupling and bypass purposes。UWSCThe series is made with deep grooves andMOSof semiconductor process production，Meet both low- and high-capacity requirements，Provides high reliability，and electrostatic capacitance stability for temperature and voltage。

Substitution Scheme2. Silicon CapacitorIPD

If a capacitor with a different capacitance value is connected toFETOffset line，then anti-resonance occurs.，and produces frequency regions with poor filter characteristics。Therefore,，To curb anti-resonance，It looks something like this:，Apart from the capacitor,，Damping resistors are also often used。that's when it becomes really important to know，Increased number of connected components，Therefore, the number of connecting lines will also increase。This leads to an increase in the parasitic inductance component of the bias line，Therefore,，The high-frequency characteristics of the filter are not very good。

Therefore,，We have prepared a range of standard products，They use Murata'sIPD（Integrated Passive Device）Technology has integrated capacitors and resistors。

This eliminates the parasitic inductive component of the wire and improves the filter characteristics in the higher frequency region.

【SilicaIPDSolutions】

If using:10nF+0.5Ωof siliconIPDProducts，with not having the same performance asIPDComparison of chemical products，will result in450MHzImpedance drops when-5dB。

【R+C/SilicaIPDPlan Benefits Comparison】

R+C/SilicaIPDProgram combinations come in four standard specifications：

• 4.7nF+0.5Ω　Thickness100um/250um
• 10nF+0.5Ω　Thickness100um/250um

Conclusion

RF power amplifier design for high-speed high-capacity communication base stations，Use silicon capacitorsIPD，Ability to better eliminate high-frequencyIMDNoise。

Murata high-density silicon capacitors use semiconductorsMOSProcess Development，and use the3Dstructure to substantially increase the electrode surface，Thus, electrostatic capacitance is increased within a given footprint。Suitable markets include network-related（RFPower Amplifier、Broadband Communications）and medical care for high-reliability applications.、Automobile、Telecommunications。

【Adoption of semiconductorsMOSMurata High Density Silicon Capacitors for Process Development】

About E-Mantech

SHENZHEN E-MANTECH CO., LIMITED was established in 2014 with a registered capital of 10 million RMB.

Its predecessor was Shenzhen Hainengda Technology Development Co., Ltd., founded in 2005.

The company is committed to becoming the preferred trading platform for electronic components in the Chinese electronics industry.

Currently, it is a first level agent for Murata in Japan, an AVX agent, a Philips power agent, a KEC agent, a Prisemi agent for Xindao, a BPS agent for Jingfeng Mingyuan, a GPI agent for New Century, a TELINK agent for Tailing, an SGX agent, and a WE smart agent.

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